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| NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.014 (max) NUltra High-Speed Switching NSOP-8 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP131A1617SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance : Rds (on) = 0.014 ( Vgs = 4.5V ) : Rds (on) = 0.019 ( Vgs = 2.5V ) Ultra high-speed switching Operational Voltage : 2.5V High density mounting : SOP-8 Ta=25 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Tch Tstg 150 -55 ~ 150 O 11 SYMBOL Vdss Vgss Id Idp Idr Pd RATINGS 20 + 12 10 40 10 2.5 UNITS V V A A A W C C O ( note ) : When implemented on a glass epoxy PCB 707 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = 20V , Vgs = 0V Vgs = 8V , Vds = 0V Id = 1mA , Vds = 10V Id = 5A , Vgs = 4.5V Id = 5A , Vgs = 2.5V Id = 5A , Vds = 10V If = 10A , Vgs = 0V 0.7 0.01 0.013 32 0.8 1.1 MIN TYP MAX 10 1 Ta=25C UNITS A A V S V 1.4 0.014 0.019 Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = 10V , Vgs = 0V f = 1 MHz MIN TYP 1650 1000 450 MAX Ta=25C UNITS pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 5A Vdd = 10V CONDITIONS MIN TYP 15 25 65 15 MAX Ta=25C UNITS ns ns ns ns 11 Thermal Characteristics PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS C / W 708 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Drain Current:Id (A) Drain-Source Voltage:Vds (V) Drain Current:Id (A) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Drain-Source On-State Resistance:Rds(on) ( ) Drain-Source On-State Resistance:Rds(on) ( ) DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Gate-Source Voltage:Vgs (V) Drain Current:Id (A) DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Gate-Source Cut-Off Voltage Variance :Vgs(off) Variance (V) Drain-Source On-State Resistance :Rds (on) ( ) GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE 11 Ambient Temp. :Topr ( ) Ambient Temp. :Topr ( ) 709 CAPACITANCE vs. DRAIN-SOURCE VOLTAGE SWITCHING TIME vs. DRAIN CURRENT Drain-Source Voltage:Vds (V) Switching Time:t (ns) Capacitance:C (pF) Drain Current:Id (A) GATE-SOURCE VOLTAGE vs. GATE CHARGE REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Gate-Source Voltage:Vgs (V) Gate Charge:Qg (nc) Reverse Drain Current:Idr (A) Source-Drain Voltage:Vsd (V) STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH 11 Pulse Width:PW (s) 710 |
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